Power MOSFET. IRF3415 Datasheet

IRF3415 MOSFET. Datasheet pdf. Equivalent


International Rectifier IRF3415
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 91477D
IRF3415
HEXFET® Power MOSFET
D
VDSS = 150V
RDS(on) = 0.042
ID = 43A
S
TO-220AB
Max.
43
30
150
200
1.3
± 20
590
22
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98


IRF3415 Datasheet
Recommendation IRF3415 Datasheet
Part IRF3415
Description Power MOSFET
Feature IRF3415; PD - 91477D IRF3415 HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Ratin.
Manufacture International Rectifier
Datasheet
Download IRF3415 Datasheet




International Rectifier IRF3415
IRF3415
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
150 ––– ––– V VGS = 0V, ID = 250µA
––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.042 VGS = 10V, ID = 22A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
19 ––– ––– S VDS = 50V, ID = 22A
––– ––– 25
––– ––– 250
µA VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 200
––– ––– 17
––– ––– 98
––– 12 –––
ID = 22A
nC VDS = 120V
VGS = 10V, See Fig. 6 and 13 „
VDD = 75V
––– 55 ––– ns ID = 22A
––– 71 –––
RG = 2.5
––– 69 –––
RD = 3.3Ω, See Fig. 10 „
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact
D
S
––– 2400 –––
VGS = 0V
––– 640 ––– pF VDS = 25V
––– 340 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
260
2.2
Max.
43
150
1.3
390
3.3
Units
A
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 22A, VGS = 0V „
TJ = 25°C, IF = 22A
di/dt = 100A/µs „
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 2.4mH
RG = 25, IAS = 22A. (See Figure 12)
ƒ ISD 22A, di/dt 820A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.



International Rectifier IRF3415
IRF3415
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.05V
BOTTOM 4.5V
100
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.05V
BOTTOM 4.5V
100
4.5V
10
1
20us PULSE WIDTH
TJ = 25 oC
10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.5V
10
1
20us PULSE WIDTH
TJ = 175 oC
10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 25° C
100
TJ = 175 ° C
V DS= 50V
20µs PULSE WIDTH
10
4 5 6 7 8 9 10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3.0 ID = 37A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( oC)
Fig 4. Normalized On-Resistance
Vs. Temperature







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