IRF3703

PD - 93918 SMPS MOSFET IRF3703 HEXFET® Power MOSFET Applications l Synchronous Rectification l Active ORing Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated VDSS 30V RDS(on) max 2.8mΩ ID 210A† TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range Max. 210 † 100 † 1000 230 3.8 1.5 ± 20 5.0 -55 to + 175 Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.5 ––– Max. 0.65 ––– 62 Units °C/W Notes  through † are on page 8 www.irf.com 1 02/27/01 IRF3703 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 2.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.028 2.3 2.8 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 2.8 VGS = 10V, ID = 76A „ mΩ 3.9 VGS = 7.0V, ID = 76A „...