Document
IRF3710SPbF IRF3710LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 23mΩ
G
ID = 57A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications.
D2Pak
TO-262
IRF3710SPbF IRF3710LPbF
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max. 57 40 180 200 1.3 ± 20 28 20 5.8
-55 to + 175
300 (1.6mm from case )
Units
A
W W/°C
V A mJ V/ns
°C
Thermal Resistance
RθJC RθJA
Parameter Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state)**
Typ. ––– –––
Max. 0.75 40
Units °C/W
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 12, 2013
IRF3710S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche Energy
Min. Typ. Max. Units
Conditions
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.13 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 23 mΩ VGS = 10V, ID =28A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
32 ––– ––– S VDS = 25V, ID = 28A
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 130
ID = 28A
––– ––– 26 nC VDS = 80V
––– ––– 43
VGS = 10V, See Fig. 6 and 13
––– 12 –––
VDD = 50V
––– 58 ––– ns ID = 28A
––– 45 –––
RG = 2.5Ω
––– 47 –––
VGS = 10V, See Fig. 10
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH from package
G
––– 7.5 –––
and center of die contact
S
––– 3130 –––
VGS = 0V
––– 410 –––
VDS = 25V
––– 72 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 1060
280 mJ IAS = 28A, L = 0.70mH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.70mH, RG = 25Ω, IAS = 28A, VGS=10V. (See Figure 12).
≤ 28A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 57
A showing the
integral reverse
G
––– ––– 230
p-n junction diode.
S
––– ––– 1.2 V TJ = 25°C, IS = 28A, VGS = 0V
––– 140 220 ns TJ = 25°C, IF = 28A ––– 670 1010 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to TJ = 175°C . Uses IRF3710 data and test conditions. **When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended fo.