DatasheetsPDF.com

IRF3717 Dataheets PDF



Part Number IRF3717
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF3717 DatasheetIRF3717 Datasheet (PDF)

PD - 95843 IRF3717 HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 20V 4.4m:@VGS = 10V A A D D D D RDS(on) max ID 20A S S 1 2 3 4 8 7 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current S G 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA =.

  IRF3717   IRF3717


Document
PD - 95843 IRF3717 HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 20V 4.4m:@VGS = 10V A A D D D D RDS(on) max ID 20A S S 1 2 3 4 8 7 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current S G 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 20 16 160 2.5 1.6 0.02 -55 to + 150 Units V c A W W/°C °C Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient Typ. ––– ––– Max. 20 50 Units °C/W f Notes  through „ are on page 10 www.irf.com 2/20/04 1 IRF3717 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. Typ. Max. Units 20 ––– ––– ––– 1.55 ––– ––– ––– ––– ––– 57 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.014 3.7 4.8 2.0 -5.4 ––– ––– ––– ––– ––– 22 6.8 2.2 7.3 5.7 9.5 12 12 14 15 6.0 2890 930 430 ––– ––– 4.4 5.7 2.45 ––– 1.0 150 100 -100 ––– 33 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– pF nC nC V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 20A V VGS = 4.5V, ID = 16A VDS = VGS, ID = 250µA e e mV/°C µA VDS = 16V, VGS = 0V nA S VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 16A VDS = 10V VGS = 4.5V ID = 16A See Fig. 16 VDS = 10V, VGS = 0V VDD = 10V, VGS = 4.5V ID = 16A Clamped Inductive Load VGS = 0V VDS = 10V ƒ = 1.0MHz Max. 32 16 Units mJ A ns Avalanche Characteristics EAS IAR ™ d Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 22 13 20 A 160 1.0 32 19 V ns nC Conditions MOSFET symbol showing the integral reverse G S D Ù p-n junction diode. TJ = 25°C, IS = 16A, VGS = 0V TJ = 25°C, IF = 16A, VDD = 10V di/dt = 100A/µs e e 2 www.irf.com IRF3717 1000 TOP VGS 10V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 2.5V 1000 TOP VGS 10V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 2.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 2.5V 20µs PULSE WIDTH Tj = 150°C 0.1 1 10 100 1 20µs PULSE WIDTH Tj = 25°C 2.5V 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 1.5 100 10 T J = 150°C RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α) ID = 20A VGS = 10V 1.0 1 T J = 25°C VDS = 10V 20µs PULSE WIDTH 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRF3717 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 6.0 ID=16A VGS, Gate-to-Source Voltage (V) 5.0 4.0 3.0 2.0 1.0 0.0 VDS= 16V VDS= 10V C, Capacitance(pF) 10000 Ciss 1000 Coss Crss 100 1 10 100 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.00 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.00 10.00 T J = 150°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 25°C 1.00 10 T A = 25°C 100µsec 1msec 10msec 1 10 100 0.10 0.0 0.2 0.4 0.6 0.8 1.0 VGS = 0V 1.2 1.4 Tj = 150°C Single Pulse 1 0 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF3717 20 VGS(th) Gate threshold Voltage (V) 2.5 ID.


IRF3711S IRF3717 IRF3808


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)