Semiconductor
IRF420, IRF421, IRF422, IRF423
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs
Des...
Semiconductor
IRF420, IRF421, IRF422, IRF423
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect
transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405.
July 1998
Features
2.2A and 2.5A, 450V and 500V rDS(ON) = 3.0Ω and 4.0Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol Ordering Information
D
PART NUMBER IRF420 IRF421 IRF422 IRF423
PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA
BRAND IRF420 IRF421 IRF422 IRF423
S G
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
© Harris Corporation 1998
File Number
1571.3
5-1
IRF420, IRF421, I...