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IRF430

Seme LAB

N-Channel Power MOSFET

IRF430 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. N–CHANNEL POWER MOSFET 26.67 (1.050) Max. 4.47 (0....


Seme LAB

IRF430

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Description
IRF430 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. N–CHANNEL POWER MOSFET 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44) 1.63 (0.064) 1.52 (0.060) VDSS ID(cont) RDS(on) 500V 4.5A 1.5W 2 11.18 (0.440) 10.67 (0.420) 4.09 (0.161) 3.84 (0.151) 2 Pls 1 FEATURES 16.97 (0.668) 16.87 (0.664) HERMETICALLY SEALED TO–3 METAL PACKAGE SIMPLE DRIVE REQUIREMENTS Case – Drain TO–3 Metal Package Pin 1 – Gate Pin 2 – Source SCREENING OPTIONS AVAILABLE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current (VGS = 0 , Tcase = 25°C) Continuous Drain Current (VGS = 0 , Tcase = 100°C) Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Current 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature 1.6mm (0.63”) from case for 10 sec. ±20V 4.5A 3A 18A 75W 0.6W/°C 1.1mJ 4.5A 3.5V/ns -55 to +150°C 300°C Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 50V , L ³ 100mH , RG = 25W , Peak IL = 4.5A , Starting TJ = 25°C 3) @ ISD £ 4.5A , di/dt £ 75A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 7.5W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 6/00 ...




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