IRF440

IRF440 Data Sheet March 1999 File Number 2308.3 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425. Features 8A, 500V rDS(ON) = 0.850Ω Single Pulse Avalanche Energy Rated SOA is Power-Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” BRAND Ordering Information PART NUMBER IRF440 PACKAGE TO-204AE IRF440 Symbol D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-204AE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF440 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF440 500 500 8.0 5.0 32 ±20 125 1.0 510 -55 to 150 300 26...