IRF4905S

PD - 97034 IRF4905SPbF IRF4905LPbF Features O Advanced Process Technology O Ultra Low On-Resistance O 150°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax O Some Parameters Are Differrent from IRF4905S O Lead-Free Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. G D HEXFET® Power MOSFET D VDSS = -55V RDS(on) = 20mΩ ID = -42A S D S D G D2Pak IRF4905SPbF S D G TO-262 IRF4905LPbF Absolute Maximum Ratings G Gate Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM ™ Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) h Single Pulse Avalanche Energy Tested Value IAR Ù Avalanche Current EAR g Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds i Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC j Junction-to-Case RθJA ij Junction-to-Ambient (PCB Mount, steady state) www.irf.com D Drain S Source Max. -70 -4...