IRF520

IRF520 Data Sheet November 1999 File Number 1574.4 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. Features 9.2A, 100V rDS(ON) = 0.270Ω SOA is Power Dissipation Limited Single Pulse Avalanche Energy Rated Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF520 PACKAGE TO-220AB BRAND IRF520 Symbol D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-172 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 IRF520 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF520 Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . ....