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IRF530NS

International Rectifier

Power MOSFET


Description
PD - 91352B IRF530NS IRF530NL HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 100V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching G RDS(on) = 90mΩ l Fully Avalanche Rated ID = 17A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techn...



International Rectifier

IRF530NS

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