TrenchMOS transistor. IRF540 Datasheet

IRF540 transistor. Datasheet pdf. Equivalent


NXP IRF540
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
IRF540, IRF540S
FEATURES
’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 100 V
ID = 23 A
RDS(ON) 77 m
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
• T.V. and computer monitor power supplies
The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package.
The IRF540S is supplied in the SOT404 (D2PAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D2PAK)
PIN DESCRIPTION
1 gate
tab
tab
2 drain1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
± 20
23
16
92
100
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.100


IRF540 Datasheet
Recommendation IRF540 Datasheet
Part IRF540
Description N-channel TrenchMOS transistor
Feature IRF540; Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S FEA.
Manufacture NXP
Datasheet
Download IRF540 Datasheet




NXP IRF540
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
IRF540, IRF540S
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS Non-repetitive avalanche Unclamped inductive load, IAS = 10 A;
energy
tp = 350 µs; Tj prior to avalanche = 25˚C;
VDD 25 V; RGS = 50 ; VGS = 10 V; refer
to fig:14
IAS Peak non-repetitive
avalanche current
MIN.
-
MAX.
230
UNIT
mJ
- 23 A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN. TYP. MAX. UNIT
- - 1.5 K/W
SOT78 package, in free air
- 60 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
gfs
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
VGS = 10 V; ID = 17 A
Tj = 175˚C
VDS = 25 V; ID = 17 A
VGS = ± 20 V; VDS = 0 V
VDS = 100 V; VGS = 0 V
VDS = 80 V; VGS = 0 V; Tj = 175˚C
ID = 17 A; VDD = 80 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 50 V; RD = 2.2 ;
VGS = 10 V; RG = 5.6
Resistive load
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
100 -
-V
89 -
-V
234V
1- -V
- - 6V
- 49 77 m
- 132 193 m
8.7 15.5 -
S
- 10 100 nA
- 0.05 10 µA
- - 250 µA
- - 65 nC
- - 10 nC
- - 29 nC
- 8 - ns
- 39 - ns
- 26 - ns
- 24 - ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 890 1187 pF
- 139 167 pF
- 83 109 pF
August 1999
2
Rev 1.100



NXP IRF540
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
IRF540, IRF540S
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS Continuous source current
(body diode)
ISM Pulsed source current (body
diode)
VSD Diode forward voltage
IF = 28 A; VGS = 0 V
trr
Reverse recovery time
IF = 17 A; -dIF/dt = 100 A/µs;
Qrr Reverse recovery charge VGS = 0 V; VR = 25 V
MIN. TYP. MAX. UNIT
- - 23 A
- - 92 A
- 0.94 1.5 V
- 61 - ns
- 200 - nC
August 1999
3
Rev 1.100







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