Power MOSFET. IRF540 Datasheet

IRF540 MOSFET. Datasheet pdf. Equivalent


STMicroelectronics IRF540
IRF540
N-CHANNEL 100V - 0.055 - 22A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
IRF540
100 V <0.077
s TYPICAL RDS(on) = 0.055
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
ID
22 A
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
Ordering Information
IRF540
SALES TYPE
MARKING
IRF540&
PACKAGE
TO-220
PACKAGING
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
Value
100
100
± 20
22
15
88
85
0.57
9
220
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
1) ISD 22A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 12A, VDD = 30V
February 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &
1/8


IRF540 Datasheet
Recommendation IRF540 Datasheet
Part IRF540
Description N-Channel Power MOSFET
Feature IRF540; IRF540 N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS .
Manufacture STMicroelectronics
Datasheet
Download IRF540 Datasheet




STMicroelectronics IRF540
IRF540
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1.76
62.5
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
100
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
°C/W
°C/W
°C
Max.
Unit
V
1
10
±100
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 11 A
Min.
2
Typ.
3
0.055
Max.
4
0.077
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS =25 V
ID = 11 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
20
870
125
52
Max.
Unit
S
pF
pF
pF
2/8



STMicroelectronics IRF540
IRF540
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
ID = 12 A
RG = 4.7
VGS = 10 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD= 80 V ID= 22 A VGS= 10V
Min.
Typ.
60
45
30
6
10
Max.
41
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 50 V
ID = 12 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
50
20
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 22 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 22 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
100
375
7.5
Max.
22
88
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8





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