Power MOSFET
PD-94044
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF5801
HEXFET® Power MOSFET
VDSS
200V
RDS(on) m...
Description
PD-94044
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF5801
HEXFET® Power MOSFET
VDSS
200V
RDS(on) max
2.2Ω
ID
0.6A
Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
D
1
6
A D
D
2
5
D
G
3
4
S
T op V iew
TSOP-6
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
0.6 0.48 4.8 2.0 0.016 ± 30 9.6 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Thermal Resistance
Symbol
RθJA
Parameter
Junction-to-Ambient
Typ.
–––
Max.
62.5
Units
°C/W
Notes through are on page 8
www.irf.com
1
01/17/01
IRF5801
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.26 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID...
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