IRF5806

PD - 93997 IRF5806 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel VDSS -20V RDS(on) max 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V ID -4.0A -3.0A Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. D 1 6 A D D 2 5 D G 3 4 S T o p V ie w Micro6™ Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -4.0 -3.3 -16.5 2.0 1.3 0.02 ± 20 -55 to + 150 Units V A W W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 62.5 Units °C/W www.irf.com 1 10/04/00 IRF5806 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Dr...