Document
PD - 93999
IRF5852
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
20 V
RDS(on) max (Ω)
0.090@VGS = 4.5V 0.120@VGS = 2.5V
ID
2.7A 2.2A
Description
These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability.
TSOP-6
G1 1 6 D1
S2
2
5
S1
G2
3
4
D2
Top View
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
20 2.7 2.2 11 0.96 0.62 7.7 ± 12 -55 to + 150
Units
V A W mW/°C V °C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Max.
130
Units
°C/W
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1
3/1/01
IRF5852
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 20 ––– ––– ––– 0.60 5.2 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.016 ––– ––– ––– ––– ––– ––– ––– ––– 4.0 0.95 0.88 6.6 1.2 15 2.4 400 48 32
Max. Units Conditions ––– V V GS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.090 VGS = 4.5V, ID = 2.7A Ω 0.120 VGS = 2.5V, ID = 2.2A 1.25 V VDS = VGS, ID = 250µA ––– S VDS = 10V, ID = 2.7A 1.0 VDS = 16V, VGS = 0V µA 25 VDS = 16V, VGS = 0V, TJ = 70°C 100 VGS = 12V nA -100 V GS = -12V 6.0 ID = 2.7A ––– nC VDS = 16V ––– VGS = 4.5V ––– VDD = 10V ––– ID = 1.0A ns ––– RG = 6.2Ω ––– VGS = 4.5V ––– VGS = 0V ––– pF VDS = 15V ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 25 6.5 0.96 A 11 1.2 38 9.8 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 0.96A, VGS = 0V TJ = 25°C, I F = 0.96A di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t ≤ 5sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF5852
100
VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V BOTTOM 1.5V TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V BOTTOM 1.5V TOP
10
10
1
1
1.50V
1.50V
0.1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
0.1 0.1
20µs PULSE WIDTH TJ = 150 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 2.7A
I D , Drain-to-Source Current (A)
10
TJ = 25 ° C TJ = 150 ° C
1.5
1.0
1
0.5
0.1 1.5
V DS = 15V 20µs PULSE WIDTH 2.0 2.5 3.0
VGS , Gate-to-Source Voltage (V)
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF5852
600
500
VGS , Gate-to-Source Voltage (V)
VGS = Ciss = Crss = Coss =
0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
10
ID = 2.7A V DS = 16V V DS = 10V
8
C, Capacitance (pF)
400
Ciss
6
300
4
200
100
2
0 1
Coss Crss
10 100
0 0 2 4 6 8
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
I D , Drain Current (A)
10
10 100us
TJ = 150 ° C
1
1
1ms
TJ = 25 ° C V GS = 0 V
0.6 0.8 1.0 1.2 1.4
10ms
0.1 0.4
0.1 0.1
TA = 25 °C TJ = 150 °C Single Pulse
1 10 1.