DatasheetsPDF.com

IRF5852 Dataheets PDF



Part Number IRF5852
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF5852 DatasheetIRF5852 Datasheet (PDF)

PD - 93999 IRF5852 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS 20 V RDS(on) max (Ω) 0.090@VGS = 4.5V 0.120@VGS = 2.5V ID 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load managem.

  IRF5852   IRF5852


Document
PD - 93999 IRF5852 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS 20 V RDS(on) max (Ω) 0.090@VGS = 4.5V 0.120@VGS = 2.5V ID 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. TSOP-6 G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 Top View Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 2.7 2.2 11 0.96 0.62 7.7 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 130 Units °C/W www.irf.com 1 3/1/01 IRF5852 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 20 ––– ––– ––– 0.60 5.2 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.016 ––– ––– ––– ––– ––– ––– ––– ––– 4.0 0.95 0.88 6.6 1.2 15 2.4 400 48 32 Max. Units Conditions ––– V V GS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.090 VGS = 4.5V, ID = 2.7A ‚ Ω 0.120 VGS = 2.5V, ID = 2.2A ‚ 1.25 V VDS = VGS, ID = 250µA ––– S VDS = 10V, ID = 2.7A 1.0 VDS = 16V, VGS = 0V µA 25 VDS = 16V, VGS = 0V, TJ = 70°C 100 VGS = 12V nA -100 V GS = -12V 6.0 ID = 2.7A ––– nC VDS = 16V ––– VGS = 4.5V ‚ ––– VDD = 10V ‚ ––– ID = 1.0A ns ––– RG = 6.2Ω ––– VGS = 4.5V ––– VGS = 0V ––– pF VDS = 15V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 25 6.5 0.96 A 11 1.2 38 9.8 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 0.96A, VGS = 0V TJ = 25°C, I F = 0.96A di/dt = 100A/µs ‚ D S ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t ≤ 5sec. ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF5852 100 VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V BOTTOM 1.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 1.75V BOTTOM 1.5V TOP 10 10 1 1 1.50V 1.50V 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 2.7A I D , Drain-to-Source Current (A) 10 TJ = 25 ° C TJ = 150 ° C 1.5 1.0 1 0.5 0.1 1.5 V DS = 15V 20µs PULSE WIDTH 2.0 2.5 3.0 VGS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5852 600 500 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 10 ID = 2.7A V DS = 16V V DS = 10V 8 C, Capacitance (pF) 400 Ciss 6 300 4 200 100 2 0 1 Coss Crss 10 100 0 0 2 4 6 8 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) I D , Drain Current (A) 10 10 100us TJ = 150 ° C 1 1 1ms TJ = 25 ° C V GS = 0 V 0.6 0.8 1.0 1.2 1.4 10ms 0.1 0.4 0.1 0.1 TA = 25 °C TJ = 150 °C Single Pulse 1 10 1.


IRF5851 IRF5852 IRF5EA1310


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)