Power MOSFET
PD - 94058
HEXFET® POWER MOSFET THRU-HOLE (TO-257AA)
IRF5Y1310CM 100V, N-CHANNEL
Product Summary
Part Number
IRF5Y131...
Description
PD - 94058
HEXFET® POWER MOSFET THRU-HOLE (TO-257AA)
IRF5Y1310CM 100V, N-CHANNEL
Product Summary
Part Number
IRF5Y1310CM BVDSS
100V
RDS(on) 0.044Ω
ID 18A*
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
TO-257AA
Features:
n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 18* 18* 72 100 0.8 ±20 210 18 10 3.8 -55 to 150 300 (0.063in./1.6m...
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