IRF624B/IRFS624B
November 2001
IRF624B/IRFS624B
250V N-Channel MOSFET
General Description
These N-Channel enhancement ...
IRF624B/IRFS624B
November 2001
IRF624B/IRFS624B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features
4.1A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
G G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
IRF624B 250 4.1 2.6 16.4 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
IRFS624B 4.1 * 2.6 * 16.4 * 75 4.1 4.9 5.5
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
49 0.39 -55 to +150 300
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