TrenchMOS transistor. IRF630 Datasheet

IRF630 transistor. Datasheet pdf. Equivalent


NXP IRF630
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
IRF630, IRF630S
FEATURES
’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 200 V
ID = 9 A
RDS(ON) 400 m
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package
The IRF630S is supplied in the SOT404 (D2PAK) surface mounting package
PINNING
SOT78 (TO220AB)
SOT404 (D2PAK)
PIN DESCRIPTION
1 gate
tab
tab
2 drain1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
9
6.3
36
88
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.100


IRF630 Datasheet
Recommendation IRF630 Datasheet
Part IRF630
Description N-channel TrenchMOS transistor
Feature IRF630; Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF630, IRF630S FEA.
Manufacture NXP
Datasheet
Download IRF630 Datasheet




NXP IRF630
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
IRF630, IRF630S
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS Non-repetitive avalanche Unclamped inductive load, IAS = 5 A;
energy
tp = 380 µs; Tj prior to avalanche = 25˚C;
VDD 25 V; RGS = 50 ; VGS = 10 V; refer
to fig;14
IAS Peak non-repetitive
avalanche current
MIN.
-
MAX.
250
UNIT
mJ
- 9A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN. TYP. MAX. UNIT
- - 1.7 K/W
SOT78 package, in free air
- 60 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
gfs
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
VGS = 10 V; ID = 5.4 A
Tj = 175˚C
VDS = 25 V; ID = 5.4 A
VGS = ± 20 V; VDS = 0 V
VDS = 200 V; VGS = 0 V
VDS = 160 V; VGS = 0 V; Tj = 175˚C
ID = 5.9 A; VDD = 160 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 100 V; RD = 10 ;
VGS = 10 V; RG = 5.6
Resistive load
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
200 -
-V
178 -
-V
234V
1- -V
- 6V
- 300 400 m
- - 1.12
3.8 9 - S
- 10 100 nA
- 0.05 10 µA
- - 250 µA
- - 39 nC
- - 6.3 nC
- - 21 nC
- 8 - ns
- 19 - ns
- 25 - ns
- 15 - ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 959 -
- 93 -
- 54 -
pF
pF
pF
August 1999
2
Rev 1.100



NXP IRF630
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
IRF630, IRF630S
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS Continuous source current
(body diode)
ISM Pulsed source current (body
diode)
VSD Diode forward voltage
IF = 9 A; VGS = 0 V
trr
Reverse recovery time
IF = 9 A; -dIF/dt = 100 A/µs;
Qrr Reverse recovery charge VGS = -10 V; VR = 25 V
MIN. TYP. MAX. UNIT
- - 9A
- - 36 A
- 0.85 1.2 V
- 92 - ns
- 0.5 - µC
August 1999
3
Rev 1.100







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