IRF630

IRF630 Datasheet N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package TAB TO-220 1 23 Features Order code VDS IRF630 200 V Extremely high dv/dt capability Very low intrinsic capacitance Gate charge minimized RDS(on) max. 0.40 Ω ID 9A D(2, TAB) Applications Switching applications G(1) S(3) AM01475v1_noZen Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. Product status link IRF630 Product summary Order code IRF630 Marking IRF630 Package TO-220 Packing Tube DS0668 - Rev 10 - December 2018 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDDS Drain-source voltage (VGS = 0 V) VDGR Drain-gate voltage (RGS = 20 kΩ) VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C EAS(2) Single pulse avalanche energy dv/dt(3) Drain-body diode dynamic dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. Starting TJ = 25 °C, ID = 4.5 A 3. ISD = 9 A, di/dt = 520 A/μs, VDD = 50 V,...