N-channel MOSFET. IRF630 Datasheet

IRF630 MOSFET. Datasheet pdf. Equivalent


STMicroelectronics IRF630
IRF630
Datasheet
N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET
in a TO220 package
TAB
TO-220
1 23
Features
Order code
VDS
IRF630
200 V
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Gate charge minimized
RDS(on) max.
0.40 Ω
ID
9A
D(2, TAB)
Applications
• Switching applications
G(1)
S(3)
AM01475v1_noZen
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™
process has specifically been designed to minimize input capacitance and gate
charge. It is therefore suitable as primary switch in advanced high-efficiency isolated
DC-DC converters.
Product status link
IRF630
Product summary
Order code
IRF630
Marking
IRF630
Package
TO-220
Packing
Tube
DS0668 - Rev 10 - December 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


IRF630 Datasheet
Recommendation IRF630 Datasheet
Part IRF630
Description N-channel MOSFET
Feature IRF630; IRF630 Datasheet N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package TAB .
Manufacture STMicroelectronics
Datasheet
Download IRF630 Datasheet




STMicroelectronics IRF630
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDDS
Drain-source voltage (VGS = 0 V)
VDGR
Drain-gate voltage (RGS = 20 kΩ)
VGS Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
EAS(2)
Single pulse avalanche energy
dv/dt(3)
Drain-body diode dynamic dv/dt ruggedness
Tstg Storage temperature range
TJ Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. Starting TJ = 25 °C, ID = 4.5 A
3. ISD = 9 A, di/dt = 520 A/μs, VDD = 50 V, TJ < TJmax
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
IRF630
Electrical ratings
Value
200
200
±20
9
6.5
36
120
110
5.8
-65 to 175
Unit
V
V
V
A
A
A
W
mJ
V/ns
°C
Value
1.26
62.5
Unit
°C/W
°C/W
DS0668 - Rev 10
page 2/13



STMicroelectronics IRF630
IRF630
Electrical characteristics
2 Electrical characteristics
TCASE = 25 °C unless otherwise specified
Table 3. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage VGS = 0 V, ID = 250 μA
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 200 V
VGS = 0 V, VDS = 200 V,
TC = 125 °C(1)
IGSS
Gate body leakage current
VDS = 0 V, VGS = 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance VGS = 10 V, ID = 4.5 A
1. Defined by design, not subject to production test.
Min.
200
Typ.
Max.
1
Unit
V
µA
100 µA
±100 nA
234V
0.29 0.40
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 4. Dynamic
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0 V
VDD = 160 V, ID = 9 A
VGS = 0 to 10 V
(see Figure 13. Test circuit for gate
charge behavior)
Min.
-
-
-
-
-
-
Typ.
370
77
14
11.6
2.2
5.5
Max.
-
-
-
-
-
-
Unit
pF
pF
pF
nC
nC
nC
Symbol
td(on)
Parameter
Turn-on delay time
tr Rise time
Table 5. Switching times
Test conditions
VDD = 100 V, ID = 4.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 12. Test circuit for
resistive load switching times and
Figure 17. Switching time
waveform)
Min.
-
-
Typ.
5.6
2.6
Max.
-
-
Unit
ns
ns
DS0668 - Rev 10
page 3/13







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