N-Channel MOSFET
®
IRF640 IRF640FP
N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET
TYPE IRF640 IRF640FP
s s s s
V...
Description
®
IRF640 IRF640FP
N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET
TYPE IRF640 IRF640FP
s s s s
V DSS 200 V 200 V
R DS(on) < 0.18 Ω < 0.18 Ω
ID 18 A 18 A
TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 1 2
1 2 3
DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
TO-220
TO-220FP
APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt( 1 ) V ISO Ts tg Tj Parameter IRF640 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at T c = 25 oC Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 18 11 72 125 1.0 5 -65 to 150 150 200 200 ± 20 18(**) 11(**) 72 40 0.32 5 2000 Value IRF 640F P V V V A A A W W/ C V/ns V
o o o
Un it
C C
() Pulse width limited by safe operating area ( 1) ISD ≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identif...
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