Document
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
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Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
PD - 94006A
IRF640N IRF640NS IRF640NL
HEXFET® Power MOSFET
D
VDSS = 200V
RDS(on) = 0.15Ω
G
ID = 18A
S
TO-220AB IRF640N
D2Pak IRF640NS
TO-262 IRF640NL
Max. 18 13 72 150 1.0 ± 20 247 18 15 8.1
-55 to +175
300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A
W W/°C
V mJ A mJ V/ns
°C
1
10/08/04
IRF640N/S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
LD Internal Drain Inductance
LS
Ciss Coss Crss
Internal Source Inductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 200 ––– ––– 2.0 6.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
–––
–––
––– ––– –––
Typ. Max. ––– ––– 0.25 ––– ––– 0.15 ––– 4.0 ––– ––– ––– 25 ––– 250 ––– 100 ––– -100 ––– 67 ––– 11 ––– 33 10 ––– 19 ––– 23 ––– 5.5 –––
4.5 –––
7.5 –––
1160 ––– 185 ––– 53 –––
Units V
V/°C Ω V S µA nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 11A VDS = VGS, ID = 250µA VDS = 50V, ID = 11A VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C VGS = 20V
VGS = -20V ID = 11A
VDS = 160V VGS = 10V, See Fig. 6 and 13
VDD = 100V ID = 11A RG = 2.5Ω RD = 9.0Ω, See Fig. 10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 18 ––– ––– 72
MOSFET symbol A showing the
integral reverse p-n junction diode.
G
D S
––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V ––– 167 251 ns TJ = 25°C, IF = 11A ––– 929 1394 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
RθJC RθCS RθJA RθJA
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ. ––– 0.50 ––– –––
Max. 1.0 ––– 62 40
Units °C/W
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2
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100 10
VGS
TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.01 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100 TJ = 175° C
10
TJ = 25°C 1
0.1 4.0
VDS= 50V 20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
IRF640N/S/L
100 10
VGS TOP 15V
10V 8.0V 7.0V 6.0V 5.5V
5.0V BOTTOM 4.5V
1
4.5V
0.1 0.1
20µs PULSE WIDTH TJ = 175°.