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IRF640NL Dataheets PDF



Part Number IRF640NL
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF640NL DatasheetIRF640NL Datasheet (PDF)

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG www.irf.com Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew„ PD - 94006A IRF640N IRF640NS IRF640NL HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.15Ω G ID = 18A S TO-220AB IRF640N D2Pak IRF640NS TO-262 IRF640NL Max. 18 13 72 150 1.0 ± 20 247 18 15 8.1 -55 to +175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C 1 10/08/04 IRF640N/S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Ciss Coss Crss Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 200 ––– ––– 2.0 6.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. ––– ––– 0.25 ––– ––– 0.15 ––– 4.0 ––– ––– ––– 25 ––– 250 ––– 100 ––– -100 ––– 67 ––– 11 ––– 33 10 ––– 19 ––– 23 ––– 5.5 ––– 4.5 ––– 7.5 ––– 1160 ––– 185 ––– 53 ––– Units V V/°C Ω V S µA nA nC ns nH pF Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 11A ƒ VDS = VGS, ID = 250µA VDS = 50V, ID = 11A ƒ VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ = 150°C VGS = 20V VGS = -20V ID = 11A VDS = 160V VGS = 10V, See Fig. 6 and 13 VDD = 100V ID = 11A RG = 2.5Ω RD = 9.0Ω, See Fig. 10 ƒ Between lead, D 6mm (0.25in.) from package G and center of die contact S VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time Min. Typ. Max. Units Conditions ––– ––– 18 ––– ––– 72 MOSFET symbol A showing the integral reverse p-n junction diode. G D S ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V ƒ ––– 167 251 ns TJ = 25°C, IF = 11A ––– 929 1394 nC di/dt = 100A/µs ƒ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)… Typ. ––– 0.50 ––– ––– Max. 1.0 ––– 62 40 Units °C/W www.irf.com 2 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 10 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 4.5V 0.1 0.01 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 TJ = 175° C 10 TJ = 25°C 1 0.1 4.0 VDS= 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) IRF640N/S/L 100 10 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 4.5V 0.1 0.1 20µs PULSE WIDTH TJ = 175°.


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