IRF6612

PD - 95842 IRF6612/IRF6612TR1 VDSS l HEXFET® Power MOSFET Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques 30V 3.3mΩ@VGS = 10V 4.4mΩ@VGS = 4.5V RDS(on) max Qg(typ.) 30nC MX Applicable DirectFET Package/Layout Pad (see p.8,9 for details) SQ SX ST MQ MX MT DirectFET ™ ISOMETRIC Description The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6612 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6612 has been optimized for parameters that are critical in sync...