HEXFET Power MOSFET
PD - 95842
IRF6612/IRF6612TR1
VDSS
l
HEXFET® Power MOSFET
Application Specific MOSFETs l Ideal for CPU Core DC-DC Con...
Description
PD - 95842
IRF6612/IRF6612TR1
VDSS
l
HEXFET® Power MOSFET
Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
30V
3.3mΩ@VGS = 10V 4.4mΩ@VGS = 4.5V
RDS(on) max
Qg(typ.)
30nC
MX
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
SQ SX ST MQ MX MT
DirectFET ISOMETRIC
Description
The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6612 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6612 has been optimized for parameters that are critical in sync...
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