DirectFETPower MOSFET
PD - 96908C
IRF6644
DirectFET Power MOSFET
l l l l l l l l l
Lead and Bromide Free Low Profile (<0.7 mm) Dual Sid...
Description
PD - 96908C
IRF6644
DirectFET Power MOSFET
l l l l l l l l l
Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
11.5nC
RDS(on) Vgs(th)
3.7V
100V max ±20V max 10.7mΩ@ 10V
35nC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST MQ MX MT MN
DirectFET ISOMETRIC
Description
The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchron...
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