IRF6665

PD - 96900 DIGITAL AUDIO MOSFET IRF6665 Key Parameters 100 53 8.7 1.9 V m: nC Features Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifier applications Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency Low Qrr for better THD and lower EMI Low package stray inductance for reduced ringing and lower EMI Can deliver up to 100W per channel into 8 Ω with no heatsink Š Dual sided cooling compatible · Compatible with existing surface mount technologies · Lead and Bromide Free Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) VDS RDS(on) typ. @ VGS = 10V Qg typ. RG(int) typ. SH ST SH MQ MX MT MN DirectFET™ ISOMETRIC SQ SX Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET TM package is compatible with ex...