IRF710

IRF710 Data Sheet June 1999 File Number 2310.3 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17444. Features 2.0A, 400V rDS(ON) = 3.600Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF710 PACKAGE TO-220AB BRAND IRF710 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC TO-220AB TOP VIEW SOURCE DRAIN GATE DRAIN (FLANGE) 4-220 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF710 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF710 400 400 2 1.2 5 ±20 36 0.29 120 -55 to 150 300 260 UNITS V V A A A V W W/o...