Document
PD - 9.1241C
IRF7306
HEXFET® Power MOSFET
l l l l l l l
Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2
7
VDSS = -30V RDS(on) = 0.10Ω
3
6
4
5
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
To p V ie w
S O -8
Absolute Maximum Ratings
Parameter
I D @ TA = 25°C I D @ TA = 25°C I D @ TA = 70°C I DM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
-4.0 -3.6 -2.9 -14 2.0 0.016 ±20 -5.0 -55 to + 150
Units
A
W W/°C V V/ns °C
Thermal Resistance Ratings
Parameter
RθJA Maximum Junction-to-Ambient
Typ.
–––
Max.
62.5
Units
°C/W 8/25/97
IRF7306
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss
Min. -30 ––– ––– ––– -1.0 2.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = -250µA -0.037 ––– V/°C Reference to 25°C, I D = -1mA ––– 0.10 VGS = -10V, ID = -1.8A Ω ––– 0.16 VGS = -4.5V, ID = -1.5A ––– ––– V VDS = VGS, ID = -250µA ––– ––– S VDS = -24V, I D = -1.8A ––– -1.0 VDS = -24V, VGS = 0V µA ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C ––– -100 V GS = -20V nA ––– 100 VGS = 20V ––– 25 ID = -1.8A ––– 2.9 nC VDS = -24V ––– 9.0 VGS = -10V, See Fig. 6 and 12 11 ––– VDD = -15V 17 ––– I D = -1.8A ns 25 ––– RG = 6.0Ω 18 ––– RD = 8.2Ω, See Fig. 10
D
4.0 6.0 440 200 93
––– nH ––– ––– ––– –––
Between lead tip and center of die contact VGS = 0V VDS = -25V ƒ = 1.0MHz, See Fig. 5
G
S
pF
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr t on
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol ––– ––– -2.5 showing the A G integral reverse ––– ––– -14 p-n junction diode. S ––– ––– -1.0 V TJ = 25°C, IS = -1.8A, VGS = 0V ––– 53 80 ns TJ = 25°C, IF = -1.8A ––– 66 99 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤150°C
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7306
100
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP
100
-ID , D ra in -to -S o u rc e C u rre n t (A )
10
-4 .5V
-I D , D ra i n -to -S o u rc e C u rre n t (A )
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4.5V TOP
10
-4.5 V
1 0.1 1
20 µs P U LSE W IDTH TJ = 25 °C A
10 100
1 0.1 1
2 0µ s PU L SE W ID TH T J = 1 50 °C
10
A
100
-VD S , Drain-to-Source Voltage (V)
-V D S , Drain-to-Source V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
TJ = 2 5 °C T J = 1 5 0 °C
R D S (o n ) , Drain-to-S ource On Resistance (N ormalized)
100
2.0
I D = -3 .0A
-I D , D ra in-to -S ou rce C urr ent ( A )
1.5
10
1.0
0.5
1 4 5 6 7
V D S = - 15 V 2 0 µ s P U L S E W ID TH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
VG S = -10V
100 120 140 160
A
-V G S , G ate-to-S o urce V oltage ( V )
T J , Junction T emperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Res.