Document
PD - 9.1243B
PRELIMINARY
IRF7309
N-CHANNEL MOSFET 1 8
HEXFET® Power MOSFET
Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
S1 G1 S2 G2
D1 D1
N-Ch VDSS 30V
P-Ch -30V
2
7
3
6
D2 D2
4
5
P-CHANNEL MOSFET
RDS(on) 0.050Ω 0.10Ω
Top View
SO-8
Absolute Maximum Ratings
Parameter
N-Channel ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulse Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation (PCB Mount)** Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range 4.7 4.0 3.2 16 1.4 0.011 ± 20 6.9 -55 to + 150 -6.0
Max.
P-Channel -3.5 -3.0 -2.4 -12
Units
A A A A W W/°C V V/ns °C
Thermal Resistance
Parameter
RθJA Junction-to-Amb. (PCB Mount, steady state)**
Min.
––––
Typ.
––––
Max.
90
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
147
IRF7309
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. 30 — — -30 — — — 0.032 — — -0.037 — — — 0.050 — — 0.080 — — 0.10 — — 0.16 1.0 — — -1.0 — — 5.2 — — 2.5 — — — — 1.0 — — -1.0 — — 25 — — -25 –– — ±100 — — 25 — — 25 — — 2.9 — — 2.9 — — 7.9 — — 9.0 — 6.8 — — 11 — — 21 — — 17 — — 22 — — 25 — — 7.7 — — 18 — — 4.0 — — 6.0 — — 520 — — 440 — — 180 — — 200 — — 72 — — 93 — Units Conditions VGS = 0V, ID = 250µA V VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA V/°C Reference to 25°C, ID = -1mA VGS = 10V, ID = 2.4A VGS = 4.5V, ID = 2.0A Ω VGS = -10V, ID = -1.8A VGS = -4.5V, ID = -1.5A VDS = VGS, ID = 250µA V VDS = VGS, ID = -250µA VDS = 15V, ID = 2.4A S VDS = -24V, ID = -1.8A VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V µA V = 24V, V = 0V, T = 125°C DS GS J VDS = -24V, VGS = 0V, TJ = 125°C VGS = ± 20V N-Channel ID = 2.6A, VDS = 16V, VGS = 4.5V nC P-Channel ID = -2.2A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 2.6A, RG = 6.0Ω, RD = 3.8Ω ns P-Channel VDD = -10V, ID = -2.2A, RG = 6.0Ω, RD = 4.5Ω nH Between lead tip and center of die contact N-Channel VGS = 0V, VDS = 15V, ƒ = 1.0MHz pF P-Channel VGS = 0V, VDS = -15V, ƒ = 1.0MHz
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P Min. Typ. Max. Units Conditions — — 1.8 — — -1.8 A — — 16 — — -12 — — 1.0 TJ = 25°C, IS = 1.8A, VGS = 0V V — — -1.0 TJ = 25°C, IS = -1.8A, VGS = 0V — 47 71 N-Channel ns — 53 80 TJ = 25°C, IF = 2.6A, di/dt = 100A/µs P-Channel — 56 84 nC TJ = 25°C, IF = -2.2A, di/dt = 100A/µs — 66 99 Intrinsic turn-on time is neglegible (turn-on is dominated by L S+LD)
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 ) N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
148
IRF7309
N-Channel
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
1000
TOP
I , Drain-to-Source Current (A) D
I , Drain-to-.