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IRF7309 Dataheets PDF



Part Number IRF7309
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRF7309 DatasheetIRF7309 Datasheet (PDF)

PD - 9.1243B PRELIMINARY IRF7309 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power.

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PD - 9.1243B PRELIMINARY IRF7309 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 D1 D1 N-Ch VDSS 30V P-Ch -30V 2 7 3 6 D2 D2 4 5 P-CHANNEL MOSFET RDS(on) 0.050Ω 0.10Ω Top View SO-8 Absolute Maximum Ratings Parameter N-Channel ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulse Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation (PCB Mount)** Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range 4.7 4.0 3.2 16 1.4 0.011 ± 20 6.9 -55 to + 150 -6.0 Max. P-Channel -3.5 -3.0 -2.4 -12 Units A A A A W W/°C V V/ns °C Thermal Resistance Parameter RθJA Junction-to-Amb. (PCB Mount, steady state)** Min. –––– Typ. –––– Max. 90 Units °C/W ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 147 IRF7309 Electrical Characteristics @ T J = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. 30 — — -30 — — — 0.032 — — -0.037 — — — 0.050 — — 0.080 — — 0.10 — — 0.16 1.0 — — -1.0 — — 5.2 — — 2.5 — — — — 1.0 — — -1.0 — — 25 — — -25 –– — ±100 — — 25 — — 25 — — 2.9 — — 2.9 — — 7.9 — — 9.0 — 6.8 — — 11 — — 21 — — 17 — — 22 — — 25 — — 7.7 — — 18 — — 4.0 — — 6.0 — — 520 — — 440 — — 180 — — 200 — — 72 — — 93 — Units Conditions VGS = 0V, ID = 250µA V VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA V/°C Reference to 25°C, ID = -1mA VGS = 10V, ID = 2.4A VGS = 4.5V, ID = 2.0A Ω VGS = -10V, ID = -1.8A VGS = -4.5V, ID = -1.5A VDS = VGS, ID = 250µA V VDS = VGS, ID = -250µA VDS = 15V, ID = 2.4A S VDS = -24V, ID = -1.8A VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V µA V = 24V, V = 0V, T = 125°C DS GS J VDS = -24V, VGS = 0V, TJ = 125°C VGS = ± 20V N-Channel ID = 2.6A, VDS = 16V, VGS = 4.5V nC P-Channel ID = -2.2A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 2.6A, RG = 6.0Ω, RD = 3.8Ω ns P-Channel VDD = -10V, ID = -2.2A, RG = 6.0Ω, RD = 4.5Ω nH Between lead tip and center of die contact N-Channel VGS = 0V, VDS = 15V, ƒ = 1.0MHz pF P-Channel VGS = 0V, VDS = -15V, ƒ = 1.0MHz ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P Min. Typ. Max. Units Conditions — — 1.8 — — -1.8 A — — 16 — — -12 — — 1.0 TJ = 25°C, IS = 1.8A, VGS = 0V V — — -1.0 TJ = 25°C, IS = -1.8A, VGS = 0V — 47 71 N-Channel ns — 53 80 TJ = 25°C, IF = 2.6A, di/dt = 100A/µs P-Channel — 56 84 nC TJ = 25°C, IF = -2.2A, di/dt = 100A/µs — 66 99 Intrinsic turn-on time is neglegible (turn-on is dominated by L S+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 ) N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. 148 IRF7309 N-Channel 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1000 TOP I , Drain-to-Source Current (A) D I , Drain-to-.


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