IRF7353D1

PD- 91802A IRF7353D1 FETKY™ MOSFET / Schottky Diode Co-packaged HEXFET® Power MOSFET and Schottky Diode q Ideal For Buck Regulator Applications q N-Channel HEXFET q Low VF Schottky Rectifier q Generation 5 Technology q SO-8 Footprint Description q A A S G 1 8 K K D D VDSS = 30V RDS(on) = 0.029Ω Schottky Vf = 0.39V 2 7 3 6 4 5 T op V ie w The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. S O -8 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current  Pulsed Drain Current Œ Power Dissipation  Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt  Junction and Storage Temperature Range Maximum 6.5 5.2 52 2.0 1.3 16 ± 20 -5.0 -55 to +150 Units A W mW/°C V V/ns °C Thermal Resistance Ra...