IRF7380

PD - 94420 IRF7380 HEXFET® Power MOSFET Applications High frequency DC-DC converters VDSS 80V RDS(on) max 73mΩ@VGS = 10V ID 3.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Max. 80 ± 20 3.6 2.9 29 2.0 0.02 2.3 -55 to + 150 Units V A W W/°C V/ns °C Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) * Typ. ––– ––– Max. 20 50 Units °C/W Notes through are on page 8 www.irf.com 1 08/28/02 IRF7380 Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 80 ––– ––– 2.0 ––– ––– ––– ––– ––– 0.09 61 ––– ––– ––– ––– ––– ––– ––– 73 4.0 20 250 20...