Power MOSFET
PD- 93895
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF7464
HEXFET® Power MOSFET
VDSS
200V
RDS(on) ...
Description
PD- 93895
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF7464
HEXFET® Power MOSFET
VDSS
200V
RDS(on) max
0.73Ω
ID
1.2A
Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
S S S G
1
8 7
A A D D D D
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
1.2 1.0 10 2.5 0.02 ± 30 6.8 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Typical SMPS Topologies
l
Telecom 48V input Forward Converter
Notes through are on page 8
www.irf.com
1
4/25/00
IRF7464
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.23 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference t...
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