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IRF7467 Dataheets PDF



Part Number IRF7467
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7467 DatasheetIRF7467 Datasheet (PDF)

PD - 93883B SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l IRF7467 HEXFET® Power MOSFET VDSS 30V RDS(on) max 12mΩ ID 11A High Frequency Buck Converters for Computer Processor Power A A D D D D l Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current S S S G 1 8 7 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Symbol VDS VGS ID.

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PD - 93883B SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l IRF7467 HEXFET® Power MOSFET VDSS 30V RDS(on) max 12mΩ ID 11A High Frequency Buck Converters for Computer Processor Power A A D D D D l Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current S S S G 1 8 7 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 30 ± 12 11 9.0 90 2.5 1.6 0.02 -55 to + 150 Units V V A W W W/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through „ are on page 8 www.irf.com 1 3/25/01 IRF7467 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.029 9.4 10.6 17 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 12 VGS = 10V, ID = 11A ƒ 13.5 mΩ VGS = 4.5V, ID = 9.0A ƒ 35 VGS = 2.8V, ID = 5.5A ƒ 2.0 V VDS = VGS, ID = 250µA 20 VDS = 16V, VGS = 0V µA 100 VDS = 16V, VGS = 0V, T J = 125°C 200 VGS = 12V nA -200 VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 28 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 21 6.7 5.8 21 7.8 2.5 19 4.0 2530 706 46 Max. Units Conditions ––– S VDS = 16V, ID = 9.0A 32 ID = 9.0A 10 nC VDS = 15V 8.7 VGS = 4.5V ƒ 29 VGS = 0V, VDS = 15V ––– VDD = 15V, ––– ID = 9.0A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 15V ––– pF ƒ = 1.0MHz Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 223 11 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Time Recovery Charge Recovery Time Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– 2.3 A 90 1.3 ––– 60 84 65 96 V ns nC ns nC VSD trr Qrr trr Qrr ––– 0.79 –––.


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