Document
PD - 93883B
SMPS MOSFET
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
l
IRF7467
HEXFET® Power MOSFET
VDSS
30V
RDS(on) max
12mΩ
ID
11A
High Frequency Buck Converters for Computer Processor Power
A A D D D D
l
Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current
S S S G
1
8 7
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 ± 12 11 9.0 90 2.5 1.6 0.02 -55 to + 150
Units
V V A W W W/°C °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –––
Max.
20 50
Units
°C/W
Notes through are on page 8
www.irf.com
1
3/25/01
IRF7467
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.029 9.4 10.6 17 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 12 VGS = 10V, ID = 11A 13.5 mΩ VGS = 4.5V, ID = 9.0A 35 VGS = 2.8V, ID = 5.5A 2.0 V VDS = VGS, ID = 250µA 20 VDS = 16V, VGS = 0V µA 100 VDS = 16V, VGS = 0V, T J = 125°C 200 VGS = 12V nA -200 VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 28 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 21 6.7 5.8 21 7.8 2.5 19 4.0 2530 706 46 Max. Units Conditions ––– S VDS = 16V, ID = 9.0A 32 ID = 9.0A 10 nC VDS = 15V 8.7 VGS = 4.5V 29 VGS = 0V, VDS = 15V ––– VDD = 15V, ––– ID = 9.0A ns ––– RG = 1.8Ω ––– VGS = 4.5V ––– VGS = 0V ––– VDS = 15V ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Typ.
––– –––
Max.
223 11
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Time Recovery Charge Recovery Time Recovery Charge
Min. Typ. Max. Units ––– ––– ––– ––– 2.3 A 90 1.3 ––– 60 84 65 96 V ns nC ns nC
VSD trr Qrr trr Qrr
––– 0.79 –––.