IRF7470

PD- 93913C SMPS MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification IRF7470 HEXFET® Power MOSFET VDSS 40V RDS(on) max 13mΩ ID 10A Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 40 ± 12 10 8.5 85 2.5 1.6 0.02 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through „ are on page 8 www.irf.com 1 3/25/01 IRF7470 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 40 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.8 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. Max. Units ––– ––– V 0.04 ––– V/°C 9.0 13 10 15 mΩ 14.5 30 ––– 2.0 V ––– 20 µA ––– 100 ––– 200 nA ––– -200 Conditions ...