Power MOSFET
PD- 94055A
SMPS MOSFET
Applications High frequency DC-DC converters
IRF7478
HEXFET® Power MOSFET RDS(on) max (mΩ)
26@V...
Description
PD- 94055A
SMPS MOSFET
Applications High frequency DC-DC converters
IRF7478
HEXFET® Power MOSFET RDS(on) max (mΩ)
26@VGS = 10V 30@VGS = 4.5V
l
VDSS
60V
ID
4.2A 3.5A
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
S S S G
1
8
A A D D D D
2
7
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
7.0 5.6 56 2.5 0.02 ± 20 3.7 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –––
Max.
20 50
Units
°C/W
Notes through are on page 8
www.irf.com
1
3/13/01
IRF7478
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 60 ––– ––– ––– 1.0 ––– ––– ––– ––– Typ....
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