IRF7507

PD - 91269I IRF7507 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8 D1 D1 D2 D2 N-Ch P-Ch 2 7 3 6 VDSS 20V -20V 4 5 P -C HANNE L M O S F E T T op V ie w RDS(on) 0.135Ω 0.27Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. M icro 8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS VGSM dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Maximum Power Dissipation„ Maximum Power Dissipation„ Linear Derating Fac...