Document
PD - 91270J
IRF7509
HEXFET® Power MOSFET
q q q q q q q
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching
S1 G1 S2 G2
N-C HANNE L M O S F E T 1 8
D1 D1 D2 D2
N-Ch
P-Ch
2
7
3
6
VDSS
30V
-30V
4
5
P -C HANNE L M O S F E T
T op V ie w
RDS(on) 0.11Ω 0.20Ω
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
M icro 8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS VGSM dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µS Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds N-Channel 30 2.7 2.1 21
Max.
P-Channel -30 -2.0 -1.6 -16
Units
V A W W mW/°C V V V/ns °C
1.25 0.8 10 ± 20 30 5.0 -55 to + 150 240 (1.6mm from case)
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Max.
100
Units
°C/W
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1
12/1/98
IRF7509
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 30 -30 — — — — — — 1.0 -1.0 1.9 0.92 — — — — –– –– — –– — –– — — — — — — — — — — — — — — — Typ. Max. — — — — 0.059 — -0.039 — 0.09 0.110 0.14 0.175 0.17 0.20 0.30 0.40 — — — — — — — — — 1.0 — -1.0 — 25 — -25 — ±100 7.8 12 7.5 11 1.2 1.8 1.3 1.9 2.5 3.8 2.5 3.7 4.7 — 9.7 — 10 — 12 — 12 — 19 — 5.3 — 9.3 — 210 — 180 — 80 — 87 — 32 — 42 — Units V V/°C Ω Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 10V, ID = 1.7A VGS = 4.5V, ID = 0.85A VGS = -10V, ID =-1.2A VGS = -4.5V, ID =-0.6A VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 10V, ID = 0.85A VDS = -10V, ID = -0.6A VDS = 24 V, VGS = 0V VDS = -24V, VGS = 0V VDS = 24 V, VGS = 0V, TJ = 125°C VDS = -24V, VGS = 0V, TJ = 125°C VGS = ± 20V N-Channel ID = 1.7A, VDS = 24V, VGS = 10V nC P-Channel ID = -1.2A, VDS = -24V, VGS = -10V N-Channel VDD = 15V, ID = 1.7A, RG = 6.1Ω, RD = 8.7Ω ns P-Channel VDD = -15V, ID = -1.2A, RG = 6.2Ω, RD = 12Ω N-Channel VGS = 0V, VDS = 25V, ƒ = 1.0MHz P-Channel VGS = 0V, VDS = -25V, ƒ = 1.0MHz
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V S
I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf C iss C oss C rss
Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
µA
pF
Source-Drain Ratings and Characteristics
Parameter IS I SM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions — — 1.25 — — -1.25 A — — 21 — — -16 — — 1.2 TJ = 25°C, IS = 1.7A, VGS = 0V V — — -1.2 TJ = 25°C, IS = -1.8A, VGS = 0V — 40 60 N-Channel ns — 30 45 TJ = 25°C, IF = 1.7A, di/dt = 100A/µs — 48 72 P-Channel nC TJ = 25°C, IF = -1.2A, di/dt = -100A/µs — 37 55
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec.
N-Channel ISD ≤ 1.7A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
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N - Channel
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
IRF7509
100
I D , Drain-to-S ource C urrent (A )
I D , D rain-to-S ou rce C u rrent (A )
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
10
10
3.0V
1
1
3.0V
0.1 0.1 1
20µ s P U LS E W ID TH TJ = 25°C A
10
0.1 0.1 1.