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IRF7521D1 Dataheets PDF



Part Number IRF7521D1
Manufacturers International Rectifier
Logo International Rectifier
Description FETKY MOSFET
Datasheet IRF7521D1 DatasheetIRF7521D1 Datasheet (PDF)

PD-91646C PRELIMINARY q q q q q IRF7521D1 8 FETKY™ MOSFET / Schottky Diode Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 K K D D VDSS = 20V RDS(on) = 0.135Ω Schottky Vf = 0.39V 2 7 3 6 4 5 Description T op V ie w The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation.

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PD-91646C PRELIMINARY q q q q q IRF7521D1 8 FETKY™ MOSFET / Schottky Diode Co-packaged HEXFET® Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 K K D D VDSS = 20V RDS(on) = 0.135Ω Schottky Vf = 0.39V 2 7 3 6 4 5 Description T op V ie w The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal device for applications where printed circuit board space is at a premium. TM The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. TM Micro8 TM Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Œ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt  Junction and Storage Temperature Range Maximum 2.4 1.9 19 1.3 0.8 10 ± 12 5.0 -55 to +150 Units A W mW/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Junction-to-Ambient  Maximum 100 Units °C/W Notes: Œ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)  ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Ž Pulse width ≤ 300µs; duty cycle ≤ 2%  Surface mounted on FR-4 board, t ≤ 10sec. www.irf.com 1 01/29/99 IRF7521D1 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Continuous Source Current(Body Diode) Pulsed Source Current (Body Diode) Body Diode Forward Voltage Reverse Recovery Time (Body Diode) Reverse RecoveryCharge Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Min. 20 ––– ––– 0.70 2.6 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Min. ––– ––– ––– ––– ––– Typ. ––– 0.085 0.12 ––– ––– ––– ––– ––– ––– 5.3 0.84 2.2 5.7 24 15 16 260 130 61 Max. Units Conditions ––– V VGS = 0V, ID = 250µA 0.135 VGS = 4.5V, ID = 1.7A ƒ Ω 0.20 VGS = 2.7V, ID = 0.85A ƒ ––– V VDS = VGS, ID = 250µA ––– S VDS = 10V, ID = 0.85A 1.0 VDS = 16V, VGS = 0V µA 25 VDS = 16V, VGS = 0V, TJ = 125°C 100 VGS = 12V nA -100 VGS = -12V 8.0 ID = 1.7A 1.3 nC VDS = 16V 3.3 VGS = 4.5V, See Fig. 6 ƒ ––– VDD = 10V ––– ID = 1.7A ns ––– RG = 6.0Ω ––– RD = 5.7Ω, ƒ ––– VGS = 0V ––– pF VDS = 15V ––– ƒ = 1.0MHz, See Fig. 5 2 MOSFET Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Typ. Max. Units Conditions ––– 1.3 A ––– 14 ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V 39 59 ns TJ = 25°C, IF = 1.7A 37 56 nC di/dt = 100A/µs ƒ Schottky Diode Maximum Ratings IF(av) ISM Max. Units. Conditions 1.9 50% Duty Cycle. Rectangular Wave, TA = 25°C A See Fig.14 1.4 TA = 70°C 120 5µs sine or 3µs Rect. pulse Following any rated 11 10ms sine or 6ms Rect. pulse load condition & A with VRRM applied Max. Units 0.50 0.62 V 0.39 0.57 0.02 mA 8 92 pF 3600 V/ µs Conditions IF = 1.0A, TJ = 25°C IF = 2.0A, TJ = 25°C IF = 1.0A, TJ = 125°C IF = 2.0A, TJ = 125°C . VR = 20V TJ = 25°C TJ = 125°C VR = 5Vdc ( 100kHz to 1 MHz) 25°C Rated VR Schottky Diode Electrical Specifications VFM Parameter Max. Forward voltage drop IRM Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2 www.irf.com 2 Power Mosfet Characteristics 100 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOT TOM 1.5V TO P IRF7521D1 100 10 I , D rain-to-Source Current (A ) D I , D ra in-to -S o urc e C u rren t (A ) D 10 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP 1 1 1 .5V 0.1 0.1 0.01 0.1 1 1 .5V 20 µ s P U LS E W ID TH TJ = 2 5°C A 10 0.01 0.1 1 2 0µ s P U L S E W ID TH TJ = 15 0°C A 10 V D S , D rain-to-S ourc e V oltage (V ) V DS , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics.


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