IRF7530

PD-93760B IRF7530 HEXFET® Power MOSFET q q q q q q Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 20V RDS(on) = 0.030Ω 3 6 4 5 Description New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. T o p V ie w Micro8  Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Q Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche EnergyT Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 5.4 4.3 40 1.3 0.80 10 33 ± 12 -55 to + 150 Units V A W mW/°C mJ V °C Thermal Resis...