IRF7707

PD -93996 IRF7707 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel VDSS -20V RDS(on) max 22mΩ@VGS = -4.5V 33mΩ@VGS = -2.5V ID -7.0A -6.0A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner 1 2 3 4 1= 2= 3= 4= D S S G D 8 7 G 6 S 8= 7= 6= 5= D S S D 5 with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -7.0 -5.7 -28 1.5 1.0 0.01 ±12 -55 to +150 Units V A W W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Am...