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IRF7805A Dataheets PDF



Part Number IRF7805A
Manufacturers International Rectifier
Logo International Rectifier
Description N-Channel Power MOSFET
Datasheet IRF7805A DatasheetIRF7805A Datasheet (PDF)

PD – 91746C IRF7805/IRF7805A HEXFET® Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses S S S G 1 8 7 A D D D D 2 3 6 Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generat.

  IRF7805A   IRF7805A



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PD – 91746C IRF7805/IRF7805A HEXFET® Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses S S S G 1 8 7 A D D D D 2 3 6 Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. The IRF7805/IRF7805A offers maximum efficiency for mobile CPU core DC-DC converters. 4 5 SO-8 T o p V ie w Device Features IRF7805 IRF7805A Vds 30V 30V Rds(on) 11mΩ 11mΩ Qg 31nC 31nC Qsw 11.5nC Qoss 36nC 36nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current TJ, TSTG IS ISM 2.5 106 25°C 70°C IDM PD Symbol VDS VGS ID 13 10 100 2.5 1.6 –55 to 150 2.5 106 °C A IRF7805 30 ±12 13 10 100 W A IRF7805A Units V Thermal Resistance Parameter Maximum Junction-to-Ambientƒ RθJA Max. 50 Units °C/W www.irf.com 1 10/10/00 IRF7805/IRF7805A Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-Source on Resistance* Drain-Source Leakage Current* V(BR)DSS RDS(on) 1.0 30 150 IGSS Qg Q gs1 Q gs2 Qgd QSW Q oss Rg td(on) tr td (off) tf ±100 22„ 31„ 3.7 1.4 6.8 8.2 30 1.7 16 20 38 16 11.5 36 IRF7805 Min Typ Max 30 – 9.2 – 11 1.0 30 150 ±100 22„ 31„ 3.7 1.4 6.8 8.2 30 1.7 16 20 38 16 ns 36 Ω VDD = 16V ID = 7A Rg = 2Ω VGS = 4.5V Resistive Load Conditions IS = 7A‚, VGS = 0V di/dt = 700A/µs VDS = 16V, VGS = 0V, IS = 7A di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7A VDS = 16V, VGS = 0 nC nA IRF7805A Min Typ Max Units 30 – 9.2 – 11 V mΩ V µA Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 7A‚ VDS = VGS,ID = 250µA VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100°C VGS = ±12V VGS = 5V, ID = 7A VDS = 16V, ID = 7A Gate Threshold Voltage* VGS(th) IDSS Gate-Source Leakage Current* Total Gate Charge* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) Output Charge* Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Source-Drain Rating & Characteristics Parameter Diode Forward Voltage* Reverse Recovery Charge… Reverse Recovery Charge (with Parallel Schotkky)… Notes:  ‚ ƒ „ … * Min VSD Qrr Qrr(s) Typ Max 1.2 88 55 Min Typ Max Units 1.2 88 55 V nC 2 Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Measured at VDS < 100mV. This approximates actual operation of a synchronous rectifier. Typ = measured - Qoss Devices are 100% tested to these parameters. www.irf.com IRF7805/IRF7805A Power MOSFET S.


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