Document
PD – 91746C
IRF7805/IRF7805A
HEXFET® Chip-Set for DC-DC Converters
• • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses
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Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. The IRF7805/IRF7805A offers maximum efficiency for mobile CPU core DC-DC converters.
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Device Features IRF7805 IRF7805A Vds 30V 30V Rds(on) 11mΩ 11mΩ Qg 31nC 31nC Qsw 11.5nC Qoss 36nC 36nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current TJ, TSTG IS ISM 2.5 106 25°C 70°C IDM PD Symbol VDS VGS ID 13 10 100 2.5 1.6 –55 to 150 2.5 106 °C A IRF7805 30 ±12 13 10 100 W A IRF7805A Units V
Thermal Resistance Parameter Maximum Junction-to-Ambient
RθJA
Max. 50
Units °C/W
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1
10/10/00
IRF7805/IRF7805A
Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-Source on Resistance* Drain-Source Leakage Current* V(BR)DSS RDS(on) 1.0 30 150 IGSS Qg Q gs1 Q gs2 Qgd QSW Q oss Rg td(on) tr td (off) tf ±100 22 31 3.7 1.4 6.8 8.2 30 1.7 16 20 38 16 11.5 36 IRF7805 Min Typ Max 30 – 9.2 – 11 1.0 30 150 ±100 22 31 3.7 1.4 6.8 8.2 30 1.7 16 20 38 16 ns 36 Ω VDD = 16V ID = 7A Rg = 2Ω VGS = 4.5V Resistive Load Conditions IS = 7A, VGS = 0V di/dt = 700A/µs VDS = 16V, VGS = 0V, IS = 7A di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7A VDS = 16V, VGS = 0 nC nA IRF7805A Min Typ Max Units 30 – 9.2 – 11 V mΩ V µA Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 7A VDS = VGS,ID = 250µA VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100°C VGS = ±12V VGS = 5V, ID = 7A VDS = 16V, ID = 7A
Gate Threshold Voltage* VGS(th) IDSS
Gate-Source Leakage Current* Total Gate Charge* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) Output Charge* Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Source-Drain Rating & Characteristics Parameter Diode Forward Voltage* Reverse Recovery Charge
Reverse Recovery Charge (with Parallel Schotkky)
Notes:
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Min VSD Qrr Qrr(s)
Typ Max 1.2 88 55
Min
Typ Max Units 1.2 88 55 V nC
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Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Measured at VDS < 100mV. This approximates actual operation of a synchronous rectifier. Typ = measured - Qoss Devices are 100% tested to these parameters.
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IRF7805/IRF7805A
Power MOSFET S.