PD- 93761
IRF7807D1
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET® Power MOSFET and Schottky Diode • Ideal ...
PD- 93761
IRF7807D1
FETKY™ MOSFET /
SCHOTTKY DIODE
Co-Pack N-channel HEXFET® Power MOSFET and
Schottky Diode Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output Low Conduction Losses Low Switching Losses Low Vf
Schottky Rectifier Description The FETKY™ family of Co-Pack HEXFET®MOSFETs and
Schottky diodes offers the designer an innovative, board space saving solution for switching
regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop
Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation
Schottky and Body Diode Average ForwardCurrent 25°C 70°C 25°C 70°C TJ, TSTG IF (AV) 25°C 70°C IDM PD Symbol VDS VGS ID Max. 30 ±12 8.3 6.6 66 2.5 1.6 3.5 2.2 –55 to 150 °C W A A Units V
A/S A/S A/S G
1 8
K/D K/D K/D K/D D
2
7
3
6
4
5
SO-8
Top View
Device Features (Max Values)
IRF7807D1
VDS RDS(on) Qg Qsw Qoss
30V 25mΩ 14nC 5.2nC 18.4nC
Junction & Storage Temp...