Power MOSFET
PD - 94279
IRF7822
HEXFET® Power MOSFET for DC-DC Converters
• • • • N-Channel Application-Specific MOSFETs Ideal for C...
Description
PD - 94279
IRF7822
HEXFET® Power MOSFET for DC-DC Converters
N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses
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Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7822 has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7822 offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application.
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DEVICE CHARACTERISTICS U IRF7822 RDS(on) QG Qsw Qoss 5.0mΩ 44nC 12nC 27nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain CurrentQ Power Dissipation TA = 25°C TA = 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source CurrentQ Thermal Resistance Parameter Maximum Junction-to-AmbientS Maximum Junction-to-Lead RθJA RθJL Max. 40 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C...
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