Document
PD - 94497
SMPS MOSFET
Applications High frequency DC-DC converters UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Typical RDS(on) = 12mΩ
IRF8010
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
15mΩ
ID
80A
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 1.1(10) N•m (lbf•in)
Max.
80 57 320 260 1.8 ± 20 16 -55 to + 175
Units
A W W/°C V V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.50 –––
Max.
0.57 ––– 62
Units
°C/W
Notes
through
are on page 8
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1
08/23/02
IRF8010
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100 ––– ––– 2.0 ––– ––– ––– ––– ––– 0.11 12 ––– ––– ––– ––– ––– ––– ––– 15 4.0 20 250 200 -200 nA V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 45A V µA VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
82 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 81 22 26 15 130 61 120 3830 480 59 3830 280 530 ––– 120 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF ns nC V ID = 80A VDS = 80V VGS = 10V VDD = 50V ID = 80A RG = 39Ω VGS = 10V VGS = 0V VDS = 25V
Conditions
VDS = 25V, ID = 45A
ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 310 45 26 Units mJ A mJ
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– 99 460 80 A 320 1.3 150 700 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25°C, IS = 80A, VGS = 0V
TJ = 150°C, IF = 80A, VDD = 50V di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF8010
10000
TOP VGS 15V 12V 10V 6.0V 5.5V 5.0V 4.5V 4.0V
1000
TOP VGS 15V 12V 10V 6.0V 5.5V 5.0V 4.5V 4.0V
ID, Drain-to-Source Current (A)
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
4.0V
10
10
4.0V
1
20µs PULSE WIDTH Tj = 25°C
0.1 0.1 1 10 100
20µs PULSE WIDTH Tj = 175°C
1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.5
I D = 80A
ID, Drain-to-Source Current (Α)
T J = 175°C
RDS(on) , Drain-to-Source On Resistance
3.0
2.5
100
(Normalized)
2.0
10
T J = 25°C
1.5
1.0
VDS = 50V 20µs PULSE WIDTH
1 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
0.5
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature
( ° C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF8010
100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
12
VGS , Gate-to-Source Voltage (V)
ID= 80A VDS= 80V VDS= 50V VDS= 20V
10 8 6 4 2 0
10000
C, Capacitance(pF)
Ciss
1000
Coss
100
Crss
10 1 10 100
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100
TJ = 175 ° C
10
ID, Drain-to-Source Current (A)
1000
I SD , Reverse Drain Current (A)
100 100µsec 10 1msec 1 Tc = 25°C Tj = 175°C Single Pulse 1 10 10msec
T J= 25 ° C
1
V GS = 0 V
0.