PD- 93773A
SMPS MOSFET
IRF820A
HEXFET® Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptable Po...
PD- 93773A
SMPS MOSFET
IRF820A
HEXFET® Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching
l
VDSS
500V
RDS(on) max
3.0Ω
ID
2.5A
Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001)
l
TO-220AB
GDS
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
2.5 1.6 10 50 0.4 ± 30 3.4 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/°C V V/ns °C
Typical SMPS Topologies:
l l
Two
transistor Forward Half Bridge and Full Bridge
Notes
through
are on page 8
www.irf.com
1
5/8/00
IRF820A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 ––– ––– 2.0 ––– ––– ––– ––– Typ. ––– 0.60...