N-Channel Power MOSFET
®
IRF830
N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET
TYPE IRF830
s s s s s
V DSS 500 V
R DS(on) < 1.5...
Description
®
IRF830
N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET
TYPE IRF830
s s s s s
V DSS 500 V
R DS(on) < 1.5 Ω
ID 4.5 A
TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
2 3
DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM ( ) P t ot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Value 500 500 ± 20 4.5 2.9 18 100 0.8 3.5 -65 to 150 150
Uni t V V V A A A W W/ C V/ ns
o o o
C C
() Pulse width limited by safe operating area (1) ISD ≤ 4.5A, di/dt ≤ 75 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
August 1998
1/8
IRF830
THERMAL DATA
R t hj-c...
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