IRF9130

IRF9130 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES 1 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 –100V –11A 0.2W 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) HERMETICALLY SEALED TO–3 METAL PACKAGE SIMPLE DRIVE REQUIREMENTS SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 12.07 (0.475) 11.30 (0.445) ±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) –11A –7.0A –50A 75W 0.6W/°C 2 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current 1 81mJ –11A 7.5mJ –5.5V/ns –55 to +150°C 300°C Repetitive Avalanche Energy 1 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature 1.6mm (0.63”) from case for 10 sec. Notes 1) Repetitive Rating – Pulse width limited by maximum junction temperature. 2) @ VDD = –25V , L ³ 1.0mH , RG = 25W , Peak IL = –11A , Starting TJ = 25°C 3) @ ISD £ –11A , di/dt £ –140A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 7.5W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0...