IRF9140

IRF9140 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES HERMETICALLY SEALED TO–3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 –100V –18A 0.2Ω SIMPLE DRIVE REQUIREMENTS SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 12.07 (0.475) 11.30 (0.445) ±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) –18A –11A –72A 125W 1W/°C 2 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current 2 500mJ –18A 12.5mJ –5.5V/ns –55 to +150°C 300°C Repetitive Avalanche Energy 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature 1.6mm (0.63”) from case for 10 sec. Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VDD = –25V , L ≥ 2.3mH , RG = 25Ω , Peak IL = –18A , Starting TJ = 25°C 3) @ ISD ≤ –18A , di/dt ≤ –100A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 9.1Ω Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9...