IRF9150

IRF9150 Data Sheet February 1999 File Number 2280.3 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49230. Features -25A, -100V rDS(ON) = 0.150Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Symbol D Ordering Information PART NUMBER IRF9150 PACKAGE TO-204AE BRAND IRF9150 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 5-20 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF9150 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF9150 -100 -100 -25 -18 -100 ±20 150 1.2 1300 -25 -55 to 150 300 UNITS V V A A A V W W/oC mJ A oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . ...