IRF9150
Data Sheet February 1999 File Number
2280.3
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
This P-Channel enhan...
IRF9150
Data Sheet February 1999 File Number
2280.3
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect
transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49230.
Features
-25A, -100V rDS(ON) = 0.150Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance
Symbol
D
Ordering Information
PART NUMBER IRF9150 PACKAGE TO-204AE BRAND IRF9150
G
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AE
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
5-20
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRF9150
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRF9150 -100 -100 -25 -18 -100 ±20 150 1.2 1300 -25 -55 to 150 300 UNITS V V A A A V W W/oC mJ A oC
oC
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . ...