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IRF9231 Dataheets PDF



Part Number IRF9231
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description P-Channel Power MOSFET
Datasheet IRF9231 DatasheetIRF9231 Datasheet (PDF)

Semiconductor IRF9230, IRF9231, IRF9232, IRF9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Description These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers,.

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Semiconductor IRF9230, IRF9231, IRF9232, IRF9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Description These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly Developmental type TA17512. January 1998 Features • -5.5A and -6.5A, -150V and -200V • rDS(ON) = 0.8Ω and 1.2Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information D PART NUMBER IRF9230 IRF9231 IRF9232 IRF9233 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF9230 IRF9231 IRF9232 IRF9233 S G NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 2226.1 6-1 IRF9230, IRF9231, IRF9232, IRF9233 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF9230 -200 -200 -6.5 -4.0 -26 ±20 75 0.6 500 -55 to 150 300 260 IRF9231 -150 -150 -6.5 -4.0 -26 ±20 75 0.6 500 -55 to 150 300 260 IRF9232 -200 -200 -5.5 -3.5 -22 ±20 75 0.6 500 -55 to 150 300 260 IRF9233 -150 -150 -5.5 -3.5 -22 ±20 75 0.6 500 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . VDGRVGS Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to TJ = 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = -250µA, VGS = 0V, (Figure10) -200 -150 VGS(TH) IDSS VGS = VDS, ID = -250µA VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TC = 125oC -2 -4 -25 -250 V V V µA µA MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF9230, IRF9232 IRF9231, IRF9233 Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) IRF9230, IRF9231 IRF9232, IRF9233 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IRF9230, IRF9231 IRF9232, IRF9233 Forward Transconductance (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V, (Figure 7) -6.5 -5.5 - ±100 A A nA IGSS rDS(ON) VGS = ±20V ID = -3.5A, VGS = -10V, (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VDS > ID(ON) x rDS(ON) MAX, ID = -3.5A, (Figure 12) VDD = 0.5 x Rated BVDSS, ID ≈ -6.5A, RG = 50Ω, VGS = -10V, (Figure 17, 18) RL = 14.7Ω for VDSS = 200V RL = 10.9Ω for VDSS = 150V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated BVDSS, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature 2.2 0.5 0.8 3.5 0.8 1.2 - Ω Ω S Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge - 30 50 50 40 31 50 100 100 80 45 ns ns ns ns nC - 18 13 - nC nC 6-2 IRF9230, IRF9231, IRF9232, IRF9233 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and t.


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