Power MOSFET. IRF9240 Datasheet

IRF9240 MOSFET. Datasheet pdf. Equivalent


Intersil Corporation IRF9240
Data Sheet
IRF9240
February 1999 File Number 2279.2
-11A, -200V, 0.500 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17522.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9240
TO-204AA
IRF9240
NOTE: When ordering, use the entire part number.
Features
• -11A, -200V
• rDS(ON) = 0.500
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
GATE (PIN 1)
SOURCE (PIN 2)
5-26
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


IRF9240 Datasheet
Recommendation IRF9240 Datasheet
Part IRF9240
Description P-Channel Power MOSFET
Feature IRF9240; IRF9240 Data Sheet February 1999 File Number 2279.2 -11A, -200V, 0.500 Ohm, P-Channel Power MOSFET .
Manufacture Intersil Corporation
Datasheet
Download IRF9240 Datasheet




Intersil Corporation IRF9240
IRF9240
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain
TC = 100oC . .
Current
.......
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.ID
.ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
aximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
IRF9240
-200
-200
-11
-7
-44
±20
125
1
790
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
BVDSS
VGS(TH)
IDSS
ID(ON)
ID = -250µA, VGS = 0V, (Figure10)
VGS = VDS, ID = -250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V,
(Figure 7)
Gate to Source Leakage Current
On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
VGS = ±20V
ID = -6A, VGS = -10V, (Figures 8, 9)
VDS > ID(ON) x rDS(ON)MAX, ID = -6A, (Figure 12)
VDD = 1.00 x Rated BVDSS, ID 11A,
RG = 9.1Ω, VGS = 10V, (Figure 17, 18)
RL = 17.5for BVDSS = 150V
RL = 9.6for BVDSS = 200V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
VGS = -10V, ID = -11A, VDS = 0.8 x Rated BVDSS,
(Figures 14, 19, 20))
Gate Charge is Essentially Independent of
Operating Temperature
VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11)
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die
Modified MOSFET
Symbol Showing the In-
ternal Devices
Inductances
D
Internal Source Inductance
LS Measured From the Source
Lead, 6mm (0.25in) From
the Flange and the Source
Bonding Pad
G
LD
LS
MIN
-200
-2
-
-
-11
-
-
4
-
-
-
-
-
-
-
-
-
-
-
-
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
RθJC
RθJA
Typical Socket Mount
S
-
-
TYP MAX UNITS
-- V
- -4 V
- -25 µA
- -250 µA
-- A
- ±100
0.35 0.500
6-
18 22
45 68
75 90
29 44
nA
S
ns
ns
ns
ns
70 90
nC
55
15
1100
375
150
5.0
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
12.5 -
nH
- 1 oC/W
- 62.5 oC/W
5-27



Intersil Corporation IRF9240
IRF9240
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
ISD
ISDM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
G
MIN TYP MAX UNITS
- - -11 A
D
- - -44 A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TC = 25oC, ISD = -11A, VGS = 0V, (Figure13)
TJ = 150oC, ISD = -11A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -11A, dISD/dt = 100A/µs
- - -1.5
- 270 -
-2-
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 9.8mH, RG = 25Ω, peak IAS = 11A (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
V
ns
µC
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25 50 75 100 125
TA, CASE TEMPERATURE (oC)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-15
-10
-5
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1 10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
5-28





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